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Novel AlGaN/GaN omega-FinFETs with excellent device performances., , , , , , , , and . ESSDERC, page 323-326. IEEE, (2016)Design of Capacitorless DRAM Based on Polycrystalline Silicon Nanotube Structure., , , , , , , , , and 2 other author(s). IEEE Access, (2021)Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance., , , , and . IEEE Access, (2020)InGaAs-based junctionless transistor with dual-spacer dielectric for low power loss and high frequency mobile network system., , , , and . ICOIN, page 436-438. IEEE Computer Society, (2016)RF performance of InGaAs-based T-gate junctionless field-effect transistors which applicable for high frequency network systems., , , , and . ICOIN, page 519-520. IEEE Computer Society, (2015)Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution., , , , , , , , and . ESSDERC, page 130-133. IEEE, (2015)Design optimization of Si/Ge-based heterojunction arch-shaped gate-all-around (GAA) tunneling field-effect transistor (TFET) which applicable for future mobile communication systems., , , , and . ICOIN, page 442-444. IEEE Computer Society, (2016)InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate., , , , , and . IEICE Trans. Electron., 97-C (7): 677-682 (2014)Rigorous Design and Analysis of Tunneling Field-Effect Transistor with Hetero-Gate-Dielectric and Tunneling-Boost n-Layer., , , , and . IEICE Trans. Electron., 96-C (5): 644-648 (2013)Polycrystalline-Silicon-MOSFET-Based Capacitorless DRAM With Grain Boundaries and Its Performances., , , , , , , , and . IEEE Access, (2021)