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VTH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate.

, , , , , and . IRPS, page 1-6. IEEE, (2019)

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VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs., , , , and . Microelectron. Reliab., (2018)Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes., , , , , , , , , and 5 other author(s). Microelectron. J., (2022)VTH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate., , , , , and . IRPS, page 1-6. IEEE, (2019)Avalanche robustness of SiC Schottky diode., , and . Microelectron. Reliab., (2016)Physics-Based Strategies for Fast TDDB Testing and Lifetime Estimation in SiC Power MOSFETs., , , , , , , and . IEEE Trans. Ind. Electron., 71 (5): 5285-5295 (May 2024)Inverse Models of Voltage and Current Probes., , and . IEEE Trans. Instrumentation and Measurement, 60 (12): 3898-3906 (2011)Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs., , , , , and . Microelectron. Reliab., 55 (9-10): 1708-1713 (2015)Robustness study of 1700 V 45 mΩ SiC MOSFETs., , , and . ICIT, page 830-834. IEEE, (2018)Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode., , , , and . Microelectron. Reliab., (2018)SiC power devices packaging with a short-circuit failure mode capability., , and . Microelectron. Reliab., (2017)