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Positive-bias temperature instability (PBTI) of GaN MOSFETs., and . IRPS, page 6. IEEE, (2015)A Versatile Internet-Accessible Electronics Workbench with Troubleshooting Capabilities., , , , , , and . Int. J. Online Eng., 5 (S1): 72-80 (2009)Breakdown in millimeter-wave power InP HEMTs: a comparison with GaAs PHEMT's., and . IEEE J. Solid State Circuits, 34 (9): 1204-1211 (1999)Nanometer-scale InGaAs Field-Effect Transistors for THz and CMOS technologies.. ESSCIRC, page 16-21. IEEE, (2013)Nanoscale InGaAs FinFETs: Band-to-Band Tunneling and Ballistic Transport., , , , and . ESSDERC, page 203-206. IEEE, (2021)Activation energy of drain-current degradation in GaN HEMTs under high-power DC stress., , and . Microelectron. Reliab., 54 (12): 2668-2674 (2014)Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs., , , , , and . IRPS, page 1-5. IEEE, (2019)Issues Faced in a Remote Instrumentation Laboratory., , , , , and . T4E, page 67-74. IEEE Computer Society, (2012)Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions., , , , , , , , and . Microelectron. Reliab., 49 (12): 1515-1519 (2009)Impact of Gate Offset on PBTI of p-GaN Gate HEMTs., , , and . IRPS, page 21-1. IEEE, (2022)