Author of the publication

Improved read/write assist mechanism for 10-transistor static random access memory cell.

, and . Int. J. Circuit Theory Appl., 50 (10): 3642-3660 (2022)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

Design of a 10-nm FinFET 11 T Near-Threshold SRAM Cell for Low-Energy Internet-of-Things Applications., , and . Circuits Syst. Signal Process., 42 (5): 3138-3151 (May 2023)Improved read/write assist mechanism for 10-transistor static random access memory cell., and . Int. J. Circuit Theory Appl., 50 (10): 3642-3660 (2022)Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design., , and . Int. J. Circuit Theory Appl., 49 (11): 3630-3652 (2021)Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM., , and . Microelectron. J., (2022)A Schmitt-Trigger-Based Low-Voltage 11 T SRAM Cell for Low-Leakage in 7-nm FinFET Technology., , , , , and . Circuits Syst. Signal Process., 41 (6): 3081-3105 (2022)Design of a Highly Stable and Robust 10T SRAM Cell for Low-Power Portable Applications., and . Circuits Syst. Signal Process., 41 (10): 5914-5932 (2022)A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins., , and . IEEE Trans. Circuits Syst. I Regul. Pap., 69 (4): 1606-1616 (2022)Design and investigation of stability- and power-improved 11T SRAM cell for low-power devices., , and . Int. J. Circuit Theory Appl., 50 (11): 3827-3845 (2022)Energy-Efficient Single-Ended Read/Write 10T Near-Threshold SRAM., and . IEEE Trans. Circuits Syst. I Regul. Pap., 70 (5): 2037-2047 (May 2023)A Highly Stable Low-Energy 10T SRAM for Near-Threshold Operation.. IEEE Trans. Circuits Syst. I Regul. Pap., 69 (12): 5195-5205 (2022)