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Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design.

, , and . Int. J. Circuit Theory Appl., 49 (11): 3630-3652 (2021)

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Flexible transition metal dichalcogenide field-effect transistors: A circuit-level simulation study of delay and power under bending, process variation, and scaling., , and . ASP-DAC, page 761-768. IEEE, (2016)Analytical SPICE-Compatible Model of Schottky-Barrier-Type GNRFETs With Performance Analysis., , , , and . IEEE Trans. Very Large Scale Integr. Syst., 24 (2): 650-663 (2016)Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design., , and . Int. J. Circuit Theory Appl., 49 (11): 3630-3652 (2021)Improved read/write assist mechanism for 10-transistor static random access memory cell., and . Int. J. Circuit Theory Appl., 50 (10): 3642-3660 (2022)Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM., , and . Microelectron. J., (2022)Efficient inclusive analytical model for delay estimation of multi-walled carbon nanotube interconnects., and . IET Circuits Devices Syst., 6 (4): 252-259 (2012)Design and Implementation of Lifting Based Integer Wavelet Transform for Image Compression Applications.. DICTAP (1), volume 166 of Communications in Computer and Information Science, page 161-172. Springer, (2011)Graphene nano-ribbon field-effect transistors as future low-power devices., , , and . ISLPED, page 151-156. IEEE, (2013)Design of a Highly Stable and Robust 10T SRAM Cell for Low-Power Portable Applications., and . Circuits Syst. Signal Process., 41 (10): 5914-5932 (2022)A Schmitt-Trigger-Based Low-Voltage 11 T SRAM Cell for Low-Leakage in 7-nm FinFET Technology., , , , , and . Circuits Syst. Signal Process., 41 (6): 3081-3105 (2022)