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A Fully Integrated 160-Gb/s D-Band Transmitter Achieving 1.1-pJ/b Efficiency in 22-nm FinFET., , , , , , , , , и 1 other автор(ы). IEEE J. Solid State Circuits, 57 (12): 3582-3598 (2022)A 128-Gb/s D-Band Receiver With Integrated PLL and ADC Achieving 1.95-pJ/b Efficiency in 22-nm FinFET., , , , , , , , , и 2 other автор(ы). IEEE J. Solid State Circuits, 58 (12): 3364-3379 (декабря 2023)A Reconfigurable Non-Uniform Power-Combining V-Band PA With +17.9 dBm Psat and 26.5% PAE in 16-nm FinFET CMOS., , , , , и . IEEE J. Solid State Circuits, 56 (5): 1502-1513 (2021)A 128Gb/s 1.95pJ/b D-Band Receiver with Integrated PLL and ADC in 22nm FinFET., , , , , , , , , и 2 other автор(ы). ISSCC, стр. 284-285. IEEE, (2023)An $E$ -Band Power Amplifier With 26.3% PAE and 24-GHz Bandwidth in 22-nm FinFET CMOS., , и . IEEE J. Solid State Circuits, 54 (5): 1266-1273 (2019)A 90 GHz Hybrid Switching Pulsed-Transmitter for Medical Imaging., , , , , и . IEEE J. Solid State Circuits, 45 (12): 2667-2681 (2010)Architecture and Circuit Choices for 5G Millimeter-Wave Beamforming Transceivers., , , , , и . IEEE Communications Magazine, 56 (12): 186-192 (2018)A 94GHz mm-wave to baseband pulsed-radar for imaging and gesture recognition., , , , , и . VLSIC, стр. 56-57. IEEE, (2012)Comparative Performance of 100-200 GHz Wideband Transceivers: CMOS vs Compound Semiconductors., , , , , , и . BCICTS, стр. 292-299. IEEE, (2023)22.3 A 76mW 40GS/s 7b Time-Interleaved Hybrid Voltage/Time-Domain ADC with Common-Mode Input Tracking., , , , , , , и . ISSCC, стр. 392-394. IEEE, (2024)