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Disambiguation of "Palacios, Tomás"

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Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO2/AlGaN gate stacks.

, , , , , , , and . IRPS, page 2. IEEE, (2015)

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Tomás Núñez

Tomás Vinar

Ana Teresa Monteiro Tomás

Tomás Barros

Tomás Mácha

 

Other publications of authors with the same name

Materials and Technology Issues for the Next Generation of Power Electronic Devices., , , , , and . DRC, page 1-2. IEEE, (2020)Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors., , and . Sensors, 18 (2): 494 (2018)Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments., , , , , , and . Microelectron. Reliab., (2018)A new GaN HEMT nonlinear model for evaluation and design of 1-2 watt power amplifiers., , , , , , and . MWSCAS, page 53-56. IEEE, (2012)First Demonstration of GaN RF HEMTs on Engineered Substrate., , , , , and . DRC, page 1-2. IEEE, (2023)Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO2/AlGaN gate stacks., , , , , , , and . IRPS, page 2. IEEE, (2015)Scaling of InAlN/GaN power transistors., , , , and . ESSDERC, page 314-317. IEEE, (2012)GaN Nanowire Field Emitters with a Self-Aligned Gate Process., , , , , , and . DRC, page 1-2. IEEE, (2020)Emerging graphene-based electronic & photonic devices, circuits, and systems Scannning the Issue., , and . Proc. IEEE, 101 (7): 1518-1521 (2013)Enabling Atmospheric Operation of Nanoscale Vacuum Channel Transistors., , , , , , and . DRC, page 1-2. IEEE, (2020)