( en | de | ru )

 

Disambiguation of "Ebrahimi, Behzad"

Author of the publication

copydeleteadd this publication to your clipboard
Low-power data encoding/decoding for energy-efficient static random access memory design.

, , , , , and . IET Circuits Devices Syst., 13 (8): 1152-1159 (2019)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Behzad Abrar

Behzad Nashat

Behzad Alafzadeh

Abolghassem Ebrahimi

Azadeh Ebrahimi

 

Other publications of authors with the same name

An accurate analytical I-V model for sub-90-nm MOSFETs and its application to read static noise margin modeling., , , and . J. Zhejiang Univ. Sci. C, 13 (1): 58-70 (2012)BEAD: Bounded error approximate adder with carry and sum speculations., , and . Integr., (2023)G4-FET modeling for circuit simulation by adaptive neuro-fuzzy training systems., , , , and . IEICE Electron. Express, 9 (10): 881-887 (2012)Single-Ended 10T SRAM Cell with High Yield and Low Standby Power., , , and . Circuits Syst. Signal Process., 40 (7): 3479-3499 (2021)Accurate and Compact Approximate 4:2 Compressors with GDI Structure., , and . Circuits Syst. Signal Process., 42 (7): 4148-4169 (July 2023)A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement., , , and . Microelectron. Reliab., 51 (12): 2069-2076 (2011)Read static noise margin aging model considering SBD and BTI effects for FinFET SRAMs., , , , and . Microelectron. Reliab., (2016)The effect of noise and depolarization on hyperpolarized tracers perfusion assessment., , and . ISBI, page 137-140. IEEE, (2007)Statistical Design Optimization of FinFET SRAM Using Back-Gate Voltage., , , and . IEEE Trans. Very Large Scale Integr. Syst., 19 (10): 1911-1916 (2011)An analytical model for read static noise margin including soft oxide breakdown, negative and positive bias temperature instabilities., , , and . Microelectron. Reliab., 53 (5): 670-675 (2013)