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Evaluating the accuracy of SRAM margin simulation through large scale Monte-Carlo simulations with accurate compact models.

, , , , , and . ICICDT, page 29-32. IEEE, (2013)

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Modeling and Simulation for DRAM and Flash Memory Technology Exploration and Development., , , , , , and . IMW, page 1-4. IEEE, (2024)Evaluating the accuracy of SRAM margin simulation through large scale Monte-Carlo simulations with accurate compact models., , , , , and . ICICDT, page 29-32. IEEE, (2013)TCAD based Design-Technology Co-Optimisations in advanced technology nodes., , , , , and . VLSI-DAT, page 1-2. IEEE, (2017)An advanced statistical compact model strategy for SRAM simulation at reduced VDD., , , , and . ESSDERC, page 205-208. IEEE, (2012)Modeling of Negative Bias Temperature Instability (NBTI) for Gate-All-Around (GAA) Stacked Nanosheet Technology., , , , , , , , , and . IRPS, page 7. IEEE, (2024)Nanowire transistor solutions for 5nm and beyond., , , , , , and . ISQED, page 269-274. IEEE, (2016)Modelling circuit performance variations due to statistical variability: Monte Carlo static timing analysis., , , , , , , , , and . DATE, page 1537-1540. IEEE, (2011)Unified approach for simulation of statistical reliability in nanoscale CMOS transistors from devices to circuits., , , , , , and . ISCAS, page 2449-2452. IEEE, (2015)Exploring Power Savings of Gate-All-Around Cryogenic Technology., , , , and . VLSI Technology and Circuits, page 1-2. IEEE, (2023)