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Ultrahigh Bias Stability of ALD In2O3 FETs Enabled by High Temperature O2 Annealing.

Z. Zhang, Z. Lin, C. Niu, M. Si, M. Alam, и P. Ye. VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)

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Peide Ye

Ying Ye

Ye Hu

Fei Ye

Ye Chen

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