Author of the publication

dec, Normal-off Operation and High Positive Gate Bias Stability.

J. Zhang, Z. Zhang, Z. Lin, K. Xu, H. Dou, B. Yang, X. Zhang, H. Wang, and P. Ye. VLSI Technology and Circuits, page 1-2. IEEE, (2023)

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Peide Ye

Ying Ye

Ye Chen

Fei Ye

Ye Hu

Other publications of authors with the same name

Bandgap engineering of two-dimensional semiconductor materialsA. Chaves, J. Azadani, H. Alsalman, D. da Costa, R. Frisenda, A. Chaves, S. Song, Y. Kim, D. He, J. Zhou and 11 other author(s). NPJ 2D MATERIALS AND APPLICATIONS, (2020)Modeling of Leakage-Assist-Switching in Ferroelectric/Dielectric Stack.M. Si, X. Lyu, and P. Ye. DRC, page 93-95. IEEE, (2019)First Demonstration of BEOL-Compatible Atomic-Layer-Deposited InGaZnO TFTs with 1.5 nm Channel Thickness and 60 nm Channel Length Achieving ON/OFF Ratio Exceeding 1011, SS of 68 mV/dec, Normal-off Operation and High Positive Gate Bias Stability.J. Zhang, Z. Zhang, Z. Lin, K. Xu, H. Dou, B. Yang, X. Zhang, H. Wang, and P. Ye. VLSI Technology and Circuits, page 1-2. IEEE, (2023)Ultrathin Atomic-Layer-Deposited In2O3 Radio-Frequency Transistors with Record High fT of 36 GHz and BEOL Compatibility.D. Zheng, A. Charnas, J. Lin, J. Anderson, D. Weinstein, and P. Ye. VLSI Technology and Circuits, page 1-2. IEEE, (2023)FeFET-Based Synaptic Cross-Bar Arrays for Deep Neural Networks: Impact of Ferroelectric Thickness on Device-Circuit Non-Idealities and System Accuracy.C. Wang, J. Victor, A. Saha, X. Chen, M. Si, T. Sharma, K. Roy, P. Ye, and S. Gupta. DRC, page 1-2. IEEE, (2023)Alleviation of Short Channel Effects in Ge Negative Capacitance pFinFETs.W. Chung, M. Si, and P. Ye. DRC, page 1-2. IEEE, (2018)Ultrahigh Bias Stability of ALD In2O3 FETs Enabled by High Temperature O2 Annealing.Z. Zhang, Z. Lin, C. Niu, M. Si, M. Alam, and P. Ye. VLSI Technology and Circuits, page 1-2. IEEE, (2023)Thermal Studies of BEOL-compatible Top-Gated Atomically Thin ALD In2O3 FETs.P. Liao, S. Alajlouni, M. Si, Z. Zhang, Z. Lin, J. Noh, C. Wilk, A. Shakouri, and P. Ye. VLSI Technology and Circuits, page 322-323. IEEE, (2022)Ultra-Fast Operation of BEOL-Compatible Atomic-Layer-Deposited In2O3 Fe-FETs: Achieving Memory Performance Enhancement with Memory Window of 2.5 V and High Endurance > 109 Cycles without VT Drift Penalty.Z. Lin, M. Si, and P. Ye. VLSI Technology and Circuits, page 1-2. IEEE, (2022)Time Response of Polarization Switching in Ge Hafnium Zirconium Oxide Nanowire Ferroelectric Field-effect Transistors.S. Alghamdi, W. Chung, M. Si, and P. Ye. DRC, page 1-2. IEEE, (2018)

BibSonomy

Disambiguation of "Ye, Peide D."