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Combined sources of intrinsic parameter fluctuations in sub-25 nm generation UTB-SOI MOSFETs: A statistical simulation study

, , , , and . Solid-State Electronics, 51 (4): 611--616 (April 2007)Impact Factor =1.247 (2005).
DOI: http://dx.doi.org/10.1016/j.sse.2007.02.022

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HSS16: A Hardware Simulator Software for Persona 16, , and . Jurnal Teknologi D (Electronics, Control, Telecommunications and Information Technology), (June 2002)UTB SOI SRAM Cell Stability under the Influence of Intrinsic Parameter Fluctuation, , , , and . 35th European Solid-State Device Research Conference (ESSDERC), page 553-556. (September 2005)Indexed IEEExplorer.Intrinsic Parameter Fluctuations in Sub-10 nm generation UTB SOI MOSFETs, , , , and . 7th European Conference on Ultimate Integration of Silicon (ULIS), page 93-96. Bologna, Italy, (April 2006)Integrating intrinsic parameter fluctuation description into BSIMSOI to forecast sub-15nm UTB SOI based 6T SRAM operation, , , , and . Solid State Electronics, 50 (1): 86-93 (January 2006)Impact Factor = 1.210 (2004).Variability in nanoscale UTB SOI devices and its impact on circuits and systems, and . Proceedings of the NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices, volume XIII of NATO Science for Peace and Security Series, Big Yalta, Ukraine, Springer, (October 2006)Indexed Springer.Implementation of Continuous-Grouped-Self-Learning (CGSL) System in Engineering Education, , , , , , , , , and 2 other author(s). International Education Studies, (November 2008)Indexed by AMICUS.A Descriptive Performance Model of a Load Balancing Single System Image, , , and . (May 2008)Indexed by Scopus.Innovative Continuous-Grouped-Self-Learning (CGSL) System in Engineering Education, Evolution in Engineering Teaching Methodology And Assessment Methods, , , , , , , , , and 1 other author(s). International Conference on Engineering Education (ICEE 2008), page 31-34. Pec-Budapest, Hungary, (July 2008)Impact of Body Thickness Fluctuation in Nanometre Scale UTB SOI MOSFETs on SRAM Cell Functionality, , , , and . 6th European Conference on Ultimate Integration of Silicon (ULIS), page 45-48. Bologna, Italy, (April 2005)Combined sources of intrinsic parameter fluctuations in sub-25 nm generation UTB-SOI MOSFETs: A statistical simulation study, , , , and . Solid-State Electronics, 51 (4): 611--616 (April 2007)Impact Factor =1.247 (2005).