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A 113mm2 32Gb 3b/cell NAND flash memory., , , , , , , , , and 28 other author(s). ISSCC, page 242-243. IEEE, (2009)A 16 Gb 3-Bit Per Cell (X3) NAND Flash Memory on 56 nm Technology With 8 MB/s Write Rate., , , , , , , , , and 38 other author(s). IEEE J. Solid State Circuits, 44 (1): 195-207 (2009)A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate., , , , , , , , , and 38 other author(s). ISSCC, page 506-507. IEEE, (2008)A 5.6MB/s 64Gb 4b/Cell NAND Flash memory in 43nm CMOS., , , , , , , , , and 47 other author(s). ISSCC, page 246-247. IEEE, (2009)A 512Gb 3-bit/Cell 3D Flash Memory on 128-Wordline-Layer with 132MB/s Write Performance Featuring Circuit-Under-Array Technology., , , , , , , , , and 42 other author(s). ISSCC, page 218-220. IEEE, (2019)A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology., , , , , , , , , and 54 other author(s). ISSCC, page 336-338. IEEE, (2018)A High-Performance 1Tb 3b/Cell 3D-NAND Flash with a 194MB/s Write Throughput on over 300 Layers $i$., , , , , , , , , and 25 other author(s). ISSCC, page 402-403. IEEE, (2023)A 176-Stacked 512Gb 3b/Cell 3D-NAND Flash with 10.8Gb/mm2 Density with a Peripheral Circuit Under Cell Array Architecture., , , , , , , , , and 26 other author(s). ISSCC, page 422-423. IEEE, (2021)A 1-Tb, 4b/Cell, 176-Stacked-WL 3D-NAND Flash Memory with Improved Read Latency and a 14.8Gb/mm2 Density., , , , , , , , , and 39 other author(s). ISSCC, page 134-135. IEEE, (2022)Reasoning Abilities of Large Language Models: In-Depth Analysis on the Abstraction and Reasoning Corpus., , , , , , , , and . CoRR, (2024)