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A 151mm2 64Gb MLC NAND flash memory in 24nm CMOS technology., , , , , , , , , and 32 other author(s). ISSCC, page 198-199. IEEE, (2011)A 151-mm2 64-Gb 2 Bit/Cell NAND Flash Memory in 24-nm CMOS Technology., , , , , , , , , and 32 other author(s). IEEE J. Solid State Circuits, 47 (1): 75-84 (2012)30.4 A 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology., , , , , , , , , and 49 other author(s). ISSCC, page 428-430. IEEE, (2021)A Low Power 64 Gb MLC NAND-Flash Memory in 15 nm CMOS Technology., , , , , , , , , and 17 other author(s). IEEE J. Solid State Circuits, 51 (1): 196-203 (2016)A 1.33Tb 4-bit/Cell 3D-Flash Memory on a 96-Word-Line-Layer Technology., , , , , , , , , and 42 other author(s). ISSCC, page 210-212. IEEE, (2019)Unloading muscle activation enhances force perception., , , , and . AH, page 4:1-4:4. ACM, (2014)A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology., , , , , , , , , and 54 other author(s). ISSCC, page 336-338. IEEE, (2018)7.1 A low-power 64Gb MLC NAND-flash memory in 15nm CMOS technology., , , , , , , , , and 17 other author(s). ISSCC, page 1-3. IEEE, (2015)Investigation of the subjective force perception based on the estimation of the muscle activities during a steering operation., , , , , , , and . SII, page 76-81. IEEE, (2013)A 1.33-Tb 4-Bit/Cell 3-D Flash Memory on a 96-Word-Line-Layer Technology., , , , , , , , , and 39 other author(s). IEEE J. Solid State Circuits, 55 (1): 178-188 (2020)