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A 0.55 THz Near-Field Sensor With a µm-Range Lateral Resolution Fully Integrated in 130 nm SiGe BiCMOS.

, , and . IEEE J. Solid State Circuits, 51 (12): 3063-3077 (2016)

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Subclasses of Self-Modifying Nets.. Selected Papers from the First and the Second European Workshop on Application and Theory of Petri Nets, volume 52 of Informatik-Fachberichte, page 187-192. Springer, (1981)Recombination current measurements in the space charge region of MOS field-induced pn junctions., and . Microelectron. Reliab., 41 (6): 789-795 (2001)A Broadband 300 GHz Power Amplifier in a 130 nm SiGe BiCMOS Technology for Communication Applications., , , , , and . IEEE J. Solid State Circuits, 57 (7): 2024-2034 (2022)Monolithically integrated 25Gbit/sec receiver for 1.55µm in photonic BiCMOS technology., , , , , , , , , and 15 other author(s). OFC, page 1-3. IEEE, (2014)SiGe BiCMOS technology for mm-wave systems., and . ISOCC, page 266-268. IEEE, (2012)Comments on I. Futo, T. Gergely.. International Working Conference on Model Realism, page 47-48. Springer, (1982)A 128-pixel 0.56THz sensing array for real-time near-field imaging in 0.13μm SiGe BiCMOS., , , , , , , , and . ISSCC, page 418-420. IEEE, (2018)A low-power, 10GS/s track-and-hold amplifier in SiGe BiCMOS technology., , , , , , , , and . ESSCIRC, page 263-266. IEEE, (2005)Towards THz high data-rate communication: a 50 Gbps all-electronic wireless link at 240 GHz., , , , and . NANOCOM, page 25:1-25:2. ACM, (2017)Wireless communication integrated circuits with CMOS-compatible SiGe HBT technology modules., , , , , , , , , and . CICC, page 351-358. IEEE, (1999)