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III-V semiconductor nanowires for future devices.

H. Schmid, B. Borg, K. Moselund, P. Kanungo, G. Signorello, S. Karg, P. Mensch, V. Schmidt, and H. Riel. DATE, page 1-2. European Design and Automation Association, (2014)

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Siegfried Karg

Erwin Karg

Winfried Karg

Herma Karg

Heinrich Karg

Other publications of authors with the same name

Highly Reproducible and CMOS-compatible VO2-based Oscillators for Brain-inspired Computing.O. Maher, R. Bernini, N. Harnack, B. Gotsmann, M. Sousa, V. Bragaglia, and S. Karg. CoRR, (2024)Two-Layered Oscillatory Neural Networks with Analog Feedforward Majority Gate for Image Edge Detection Application.M. Abernot, C. Delacour, A. Suna, J. Gregg, S. Karg, and A. Todri-Sanial. ISCAS, page 1-5. IEEE, (2023)Electrical and thermoelectrical properties of gated InAs nanowires.P. Mensch, S. Karg, B. Gotsmann, P. Kanungo, V. Schmidt, V. Troncale, H. Schmid, and H. Riel. ESSDERC, page 252-255. IEEE, (2013)Ballistic transport and high thermopower in one-dimensional InAs nanowires.S. Karg, V. Schaller, A. Gaul, K. Moselund, H. Schmid, B. Gotsmann, J. Gooth, and H. Riel. ESSDERC, page 341-344. IEEE, (2016)Resistive Coupled VO2 Oscillators for Image Recognition.E. Corti, B. Gotsmann, K. Moselund, I. Stolichnov, A. Ionescu, and S. Karg. ICRC, page 1-7. IEEE, (2018)Insights Into the Dynamics of Coupled VO2 Oscillators for ONNs.J. Núñez, J. Quintana, M. Avedillo, M. Través, A. Todri-Sanial, E. Corti, S. Karg, and B. Linares-Barranco. IEEE Trans. Circuits Syst. II Express Briefs, 68 (10): 3356-3360 (2021)Coupled VO2 oscillators circuit as analog first layer filter in convolutional neural networks.E. Corti, J. Jimenez, K. Niang, J. Robertson, K. Moselund, B. Gotsmann, A. Ionescu, and S. Karg. CoRR, (2020)Multi-Scale Modeling and Simulation Flow for Oscillatory Neural Networks for Edge Computing.S. Carapezzi, C. Delacour, G. Boschetto, E. Corti, M. Abernot, A. Nejim, T. Gil, S. Karg, and A. Todri-Sanial. NEWCAS, page 1-5. IEEE, (2021)Frequency Injection Locking-Controlled Oscillations for Synchronized Operations in VO2 Crossbar Devices.E. Corti, C. Delacour, A. Todri-Sanial, and S. Karg. DRC, page 1-2. IEEE, (2021)III-V semiconductor nanowires for future devices.H. Schmid, B. Borg, K. Moselund, P. Kanungo, G. Signorello, S. Karg, P. Mensch, V. Schmidt, and H. Riel. DATE, page 1-2. European Design and Automation Association, (2014)

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Disambiguation of "Karg, Siegfried F."

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III-V semiconductor nanowires for future devices.

Please choose a person to relate this publication to

Siegfried Karg

Erwin Karg

Winfried Karg

Herma Karg

Heinrich Karg

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Karg, Siegfried F."

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML III-V semiconductor nanowires for future devices.

Please choose a person to relate this publication to

Siegfried Karg

Erwin Karg

Winfried Karg

Herma Karg

Heinrich Karg

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
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III-V semiconductor nanowires for future devices.