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Variability in Resistive Memories., , , , , , , , , and 10 other author(s). Adv. Intell. Syst., (June 2023)Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks., , , , , , , , and . IRPS, page 1-5. IEEE, (2020)A spline quasi-interpolation based method to obtain the reset voltage in Resistive RAMs in the charge-flux domain., , , , and . J. Comput. Appl. Math., (2019)Stochastic modeling of Random Access Memories reset transitions., , , and . Math. Comput. Simul., (2019)Design and simulation of memristor-based neural networks., , , , , and . CoRR, (2023)Behavioral modeling of multilevel HfO2-based memristors for neuromorphic circuit simulation., , , , , , , and . DCIS, page 1-6. IEEE, (2020)An enhanced Verilog-A compact model for bipolar RRAMs including transient thermal effects and series resistance., , , , and . DCIS, page 1-6. IEEE, (2022)Reversible dielectric breakdown in h-BN stacks: a statistical study of the switching voltages., , , , , , , , , and 3 other author(s). IRPS, page 1-5. IEEE, (2020)Modeling of retention time degradation due to inelastic trap-assisted tunneling in EEPROM devices., , , , , and . Microelectron. Reliab., 43 (9-11): 1495-1500 (2003)Estimation of the reset voltage in resistive RAMs using the charge-flux domain and a numerical method based on quasi-interpolation and discrete orthogonal polynomials., , , and . Math. Comput. Simul., (2019)