( en | de | ru )

 

Disambiguation of "Lanza, Mario"

Author of the publication

copydeleteadd this publication to your clipboard
Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks.

, , , , , , , , and . IRPS, page 1-5. IEEE, (2020)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Giovanni Lanza

Gisela Lanza

Edoardo Giuseppe Lanza

Marco Lanza

Gisela Lanza

 

Other publications of authors with the same name

Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors., , , , , , and . Microelectron. Reliab., 53 (6): 867-871 (2013)Memristors with Initial Low-Resistive State for Efficient Neuromorphic Systems., , , , , , , , , and 1 other author(s). Adv. Intell. Syst., (2022)Skyrmion-based Leaky Integrate and Fire Neurons for Neuromorphic Applications., , , , and . CoRR, (2022)Influence of the manufacturing process on the electrical properties of thin (k stacks observed with CAFM., , , , , , , and . Microelectron. Reliab., 47 (9-11): 1424-1428 (2007)Reversible dielectric breakdown in h-BN stacks: a statistical study of the switching voltages., , , , , , , , , and 3 other author(s). IRPS, page 1-5. IEEE, (2020)Enhanced reliability of hexagonal boron nitride dielectric stacks due to high thermal conductivity., , , , , , and . IRPS, page 6-1. IEEE, (2018)Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale., , , , , and . Microelectron. Reliab., 49 (9-11): 1188-1191 (2009)Variability in Resistive Memories., , , , , , , , , and 10 other author(s). Adv. Intell. Syst., (June 2023)Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks., , , , , , , , and . IRPS, page 1-5. IEEE, (2020)UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements., , , , , and . Microelectron. Reliab., 50 (9-11): 1312-1315 (2010)