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Thermal Studies of BEOL-compatible Top-Gated Atomically Thin ALD In2O3 FETs.

P. Liao, S. Alajlouni, M. Si, Z. Zhang, Z. Lin, J. Noh, C. Wilk, A. Shakouri, and P. Ye. VLSI Technology and Circuits, page 322-323. IEEE, (2022)

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Peide Ye

Ying Ye

Ye Chen

Fei Ye

Ye Hu

Other publications of authors with the same name

Modeling of Leakage-Assist-Switching in Ferroelectric/Dielectric Stack.M. Si, X. Lyu, and P. Ye. DRC, page 93-95. IEEE, (2019)Bandgap engineering of two-dimensional semiconductor materialsA. Chaves, J. Azadani, H. Alsalman, D. da Costa, R. Frisenda, A. Chaves, S. Song, Y. Kim, D. He, J. Zhou and 11 other author(s). NPJ 2D MATERIALS AND APPLICATIONS, (2020)First Demonstration of BEOL-Compatible Atomic-Layer-Deposited InGaZnO TFTs with 1.5 nm Channel Thickness and 60 nm Channel Length Achieving ON/OFF Ratio Exceeding 1011, SS of 68 mV/dec, Normal-off Operation and High Positive Gate Bias Stability.J. Zhang, Z. Zhang, Z. Lin, K. Xu, H. Dou, B. Yang, X. Zhang, H. Wang, and P. Ye. VLSI Technology and Circuits, page 1-2. IEEE, (2023)Ultrathin Atomic-Layer-Deposited In2O3 Radio-Frequency Transistors with Record High fT of 36 GHz and BEOL Compatibility.D. Zheng, A. Charnas, J. Lin, J. Anderson, D. Weinstein, and P. Ye. VLSI Technology and Circuits, page 1-2. IEEE, (2023)FeFET-Based Synaptic Cross-Bar Arrays for Deep Neural Networks: Impact of Ferroelectric Thickness on Device-Circuit Non-Idealities and System Accuracy.C. Wang, J. Victor, A. Saha, X. Chen, M. Si, T. Sharma, K. Roy, P. Ye, and S. Gupta. DRC, page 1-2. IEEE, (2023)Alleviation of Short Channel Effects in Ge Negative Capacitance pFinFETs.W. Chung, M. Si, and P. Ye. DRC, page 1-2. IEEE, (2018)Characterization and reliability of III-V gate-all-around MOSFETs.M. Si, S. Shin, N. Conrad, J. Gu, J. Zhang, M. Alam, and P. Ye. IRPS, page 4. IEEE, (2015)Steep-Slope Hysteresis-Free Negative-Capacitance 2D Transistors.P. Ye. DRC, page 1. IEEE, (2018)Record RF Performance of Ultra-thin Indium Oxide Transistors with Buried-gate Structure.A. Charnas, J. Anderson, J. Zhang, D. Zheng, D. Weinstein, and P. Ye. DRC, page 1-2. IEEE, (2022)High-Performance Few-Layer Tellurium CMOS Devices Enabled by Atomic Layer Deposited Dielectric Doping Technique.G. Qiu, M. Si, Y. Wang, X. Lyu, W. Wu, and P. Ye. DRC, page 1-2. IEEE, (2018)

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Disambiguation of "Ye, Peide D."

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Thermal Studies of BEOL-compatible Top-Gated Atomically Thin ALD In2O3 FETs.

Please choose a person to relate this publication to

Peide Ye

Ying Ye

Ye Chen

Fei Ye

Ye Hu

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Ye, Peide D."

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Thermal Studies of BEOL-compatible Top-Gated Atomically Thin ALD In2O3 FETs.

Please choose a person to relate this publication to

Peide Ye

Ying Ye

Ye Chen

Fei Ye

Ye Hu

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
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Thermal Studies of BEOL-compatible Top-Gated Atomically Thin ALD In2O3 FETs.