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Reliability simulation for analog ICs: Goals, solutions, and challenges., , , , , , , и . Integr., (2016)Effect of oxide breakdown on RS latches., , , и . Microelectron. Reliab., 47 (4-5): 581-584 (2007)SPICE modelling of hot-carrier degradation in Si1-xGex S/D and HfSiON based pMOS transistors., , , , , , , и . Microelectron. Reliab., 50 (9-11): 1263-1266 (2010)Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO2 films., , , и . Microelectron. Reliab., 41 (7): 1011-1013 (2001)Influence of the SiO2 layer thickness on the degradation of HfO2/SiO2 stacks subjected to static and dynamic stress conditions., , , , и . Microelectron. Reliab., 47 (4-5): 544-547 (2007)Investigation of Conductivity Changes in Memristors under Massive Pulsed Characterization., , , , и . DCIS, стр. 1-4. IEEE, (2018)Statistical characterization and modeling of random telegraph noise effects in 65nm SRAMs cells., , , , , , , и . SMACD, стр. 1-4. IEEE, (2017)Threshold voltage and on-current Variability related to interface traps spatial distribution., , , , , , , , и . ESSDERC, стр. 230-233. IEEE, (2015)Experimental Verification of Memristor-Based Material Implication NAND Operation., , , , , , , и . IEEE Trans. Emerg. Top. Comput., 7 (4): 545-552 (2019)Reliability of ultra-thin oxides in CMOS circuits., , , и . Microelectron. Reliab., 43 (9-11): 1353-1360 (2003)