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The measurement of the tip current noise as a method to characterize the exposed area of coated ESTM tips., , , and . IEEE Trans. Instrumentation and Measurement, 52 (3): 859-864 (2003)FinFET and MOSFET preliminary comparison of gate oxide reliability., , , , , and . Microelectron. Reliab., 46 (9-11): 1608-1611 (2006)Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses., , , , and . Microelectron. Reliab., 49 (9-11): 1024-1028 (2009)A new approach to the modeling of oxide breakdown on CMOS circuits., , , and . Microelectron. Reliab., 44 (9-11): 1519-1522 (2004)Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale., , , , , and . Microelectron. Reliab., 49 (9-11): 1188-1191 (2009)Pre-breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM., , , and . Microelectron. Reliab., 43 (8): 1203-1209 (2003)Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures., , , , , , , , , and 1 other author(s). Microelectron. Reliab., 52 (9-10): 2110-2114 (2012)Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs., , , , , , , and . Microelectron. Reliab., 47 (9-11): 1349-1352 (2007)Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors., , , , , and . Microelectron. Reliab., 48 (8-9): 1521-1524 (2008)Local current fluctuations before and after breakdown of thin SiO2 films observed with conductive atomic force microscope., , , , , and . Microelectron. Reliab., 41 (7): 1041-1044 (2001)