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Test methodology of a new upset mechanism induced by protons in deep sub-micron devices.

C. Weulersse, F. Miller, D. Alexandrescu, E. Schaefer, O. Crépel, and R. Gaillard. Microelectron. Reliab., 52 (9-10): 2482-2486 (2012)

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Florent Yang

Electrochemical modification of Si surfaces by methyl groups (CH_1tn3, CD_1tn 3) ethynyl derivatives, pyrrole and thiopheneF. Yang. HU Berlin, (2008)

Florent Haiss

Florent Berthaut

Florent Colombet

Florent Thouvenin

Other publications of authors with the same name

Accelerated degradation data of SiC MOSFETs for lifetime and Remaining Useful Life assessment.T. Santini, S. Morand, M. Fouladirad, L. Phung, F. Miller, B. Foucher, A. Grall, and B. Allard. Microelectron. Reliab., 54 (9-10): 1718-1723 (2014)Latchup effect in CMOS IC: a solution for crypto-processors protection against fault injection attacks?N. Buard, F. Miller, C. Ruby, and R. Gaillard. IOLTS, page 63-70. IEEE Computer Society, (2007)Using Application Profiling based on a Virtual Platform for SoC Fault Tolerance Assessment.L. Noizette, F. Miller, T. Colladant, Y. Helen, and R. Leveugle. PRIME, page 225-228. IEEE, (2022)Prediction of Transient Induced by Neutron/Proton in CMOS Combinational Logic Cells.G. Hubert, A. Bougerol, F. Miller, N. Buard, L. Anghel, T. Carrière, F. Wrobel, and R. Gaillard. IOLTS, page 63-74. IEEE Computer Society, (2006)Prediction of proton cross sections for SEU in SRAMs and SDRAMs using the METIS engineer tool.C. Weulersse, F. Miller, T. Carrière, and R. Mangeret. Microelectron. Reliab., 55 (9-10): 1491-1495 (2015)Novel DRAM mitigation technique.A. Bougerol, F. Miller, and N. Buard. IOLTS, page 109-113. IEEE Computer Society, (2009)SDRAM Architecture & Single Event Effects Revealed with Laser.A. Bougerol, F. Miller, and N. Buard. IOLTS, page 283-288. IEEE Computer Society, (2008)Non-homogenous gamma process: Application to SiC MOSFET threshold voltage instability.T. Santini, S. Morand, M. Fouladirad, F. Miller, A. Grall, and B. Allard. Microelectron. Reliab., (2017)Test methodology of a new upset mechanism induced by protons in deep sub-micron devices.C. Weulersse, F. Miller, D. Alexandrescu, E. Schaefer, O. Crépel, and R. Gaillard. Microelectron. Reliab., 52 (9-10): 2482-2486 (2012)

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Disambiguation of "Miller, Florent"

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Test methodology of a new upset mechanism induced by protons in deep sub-micron devices.

Please choose a person to relate this publication to

Florent Yang

Florent Haiss

Florent Berthaut

Florent Colombet

Florent Thouvenin

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Miller, Florent"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Test methodology of a new upset mechanism induced by protons in deep sub-micron devices.

Please choose a person to relate this publication to

Florent Yang

Florent Haiss

Florent Berthaut

Florent Colombet

Florent Thouvenin

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
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Test methodology of a new upset mechanism induced by protons in deep sub-micron devices.