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Impacts of external magnetic field and high temperature disturbance on MRAM reliability based on FPGA test platform.

K. Yang, Y. Zhao, J. Yang, X. Xue, Y. Lin, and J. Bae. ASICON, page 1-4. IEEE, (2015)

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Xue Xue Zhang

Xiaoyong Zhang

Xiaoyong Tian

Xiaoyong Zhang

Other publications of authors with the same name

A 2Mb ReRAM with two bits error correction codes circuit for high reliability application.J. Yang, Y. Meng, X. Xue, R. Huang, Q. Zhou, J. Wu, and Y. Lin. ASICON, page 1-4. IEEE, (2013)An Emerging NVM CIM Accelerator With Shared-Path Transpose Read and Bit-Interleaving Weight Storage for Efficient On-Chip Training in Edge Devices.Z. Guo, D. Chen, C. Zhao, J. Fang, J. Jiang, Y. Liu, H. Tian, X. Xiong, K. Zhou, X. Xue and 2 other author(s). IEEE Trans. Circuits Syst. II Express Briefs, 70 (7): 2645-2649 (July 2023)HashC: Making deep learning coverage testing finer and faster.W. Sun, X. Xue, Y. Lu, J. Zhao, and M. Sun. J. Syst. Archit., (November 2023)Nonvolatile Binary CNN Accelerator with Extremely Low Standby Power using RRAM for IoT Applications.Y. Cai, K. Zhou, X. Xue, M. Wang, and X. Zeng. ASICON, page 1-4. IEEE, (2019)Novel 15T SRAM Cell for Low Voltage High Reliability Application.Y. Han, Y. Zhao, Q. Hu, X. Liu, B. Peng, H. Jiang, J. Yang, and X. Xue. ASICON, page 1-4. IEEE, (2021)A 9Mb HZO-Based Embedded FeRAM with 1012-Cycle Endurance and 5/7ns Read/Write using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier.J. Yang, Q. Luo, X. Xue, H. Jiang, Q. Wu, Z. Han, Y. Cao, Y. Han, C. Dou, H. Lv and 2 other author(s). ISSCC, page 498-499. IEEE, (2023)A High Reliability 500 µW Resistance-to-Digital Interface Circuit for SnO2 Gas Sensor IoT Applications.J. Yang, X. Li, Q. Ding, X. Xue, X. Xu, Q. Luo, H. Lv, and M. Liu. ASICON, page 1-4. IEEE, (2019)Dynamic Data-Dependent Reference to Improve Sense Margin and Speed of Magnetoresistive Random Access Memory.X. Xue, Y. Fu, Y. Zhao, J. Xu, J. Yang, Y. Xie, Y. Lin, R. Huang, Q. Zou, and J. Wu. IEEE Trans. Circuits Syst. II Express Briefs, 64-II (2): 186-190 (2017)An Orthogonal Algorithm for Key Management in Hardware Obfuscation.J. Wang, Y. Zhang, P. Wang, Z. Luan, X. Xue, X. Zeng, and Q. Yu. AsianHOST, page 1-4. IEEE, (2019)Novel RRAM programming technology for instant-on and high-security FPGAs.X. Xue, W. Jian, Y. Xie, Q. Dong, R. Yuan, and Y. Lin. ASICON, page 291-294. IEEE, (2011)

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Disambiguation of "Xue, Xiaoyong"

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Impacts of external magnetic field and high temperature disturbance on MRAM reliability based on FPGA test platform.

Please choose a person to relate this publication to

Xue Xue Zhang

Xiaoyong Zhang

Xiaoyong Tian

Xiaoyong Zhang

Xiaoyong Zhang

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Xue, Xiaoyong"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Impacts of external magnetic field and high temperature disturbance on MRAM reliability based on FPGA test platform.

Please choose a person to relate this publication to

Xue Xue Zhang

Xiaoyong Zhang

Xiaoyong Tian

Xiaoyong Zhang

Xiaoyong Zhang

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Impacts of external magnetic field and high temperature disturbance on MRAM reliability based on FPGA test platform.