Author of the publication

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Impacts of external magnetic field and high temperature disturbance on MRAM reliability based on FPGA test platform.

K. Yang, Y. Zhao, J. Yang, X. Xue, Y. Lin, and J. Bae. ASICON, page 1-4. IEEE, (2015)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Yinyin Yuan

Lin Lin

Other publications of authors with the same name

Low-power high-yield SRAM design with VSS adaptive boosting and BL capacitance variation sensing.N. Liu, Y. Jiang, Q. Dong, H. Li, X. Hu, and Y. Lin. ASICON, page 1-4. IEEE, (2013)Novel RRAM programming technology for instant-on and high-security FPGAs.X. Xue, W. Jian, Y. Xie, Q. Dong, R. Yuan, and Y. Lin. ASICON, page 291-294. IEEE, (2011)Dynamic Data-Dependent Reference to Improve Sense Margin and Speed of Magnetoresistive Random Access Memory.X. Xue, Y. Fu, Y. Zhao, J. Xu, J. Yang, Y. Xie, Y. Lin, R. Huang, Q. Zou, and J. Wu. IEEE Trans. Circuits Syst. II Express Briefs, 64-II (2): 186-190 (2017)3D vertical RRAM architecture and operation algorithms with effective IR-drop suppressing and anti-disturbance.Y. Lin, R. Yuan, X. Xue, and B. Chen. ISCAS, page 377-380. IEEE, (2015)A small area and low power true random number generator using write speed variation of oxidebased RRAM for IoT security application.J. Yang, Y. Lin, Y. Fu, X. Xue, and B. Chen. ISCAS, page 1-4. IEEE, (2017)A low cost and high reliability true random number generator based on resistive random access memory.J. Yang, J. Xu, B. Wang, X. Xue, R. Huang, Q. Zou, J. Wu, and Y. Lin. ASICON, page 1-4. IEEE, (2015)Impacts of external magnetic field and high temperature disturbance on MRAM reliability based on FPGA test platform.K. Yang, Y. Zhao, J. Yang, X. Xue, Y. Lin, and J. Bae. ASICON, page 1-4. IEEE, (2015)A 0.13µm 8Mb logic based CuxSiyO resistive memory with self-adaptive yield enhancement and operation power reduction.X. Xue, W. Jian, J. Yang, F. Xiao, G. Chen, X. Xu, Y. Xie, Y. Lin, R. Huang, Q. Zhou and 1 other author(s). VLSIC, page 42-43. IEEE, (2012)A Logic Resistive Memory Chip for Embedded Key Storage With Physical Security.Y. Xie, X. Xue, J. Yang, Y. Lin, Q. Zou, R. Huang, and J. Wu. IEEE Trans. Circuits Syst. II Express Briefs, 63-II (4): 336-340 (2016)A 3D RRAM Using a Stackable Multi-Layer 1TXR Cell.J. Zhang, Y. Ding, X. Xue, G. Jin, Y. Wu, Y. Xie, and Y. Lin. IEICE Trans. Electron., 93-C (12): 1692-1699 (2010)

BibSonomy

Disambiguation of "Lin, Yinyin"

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Impacts of external magnetic field and high temperature disturbance on MRAM reliability based on FPGA test platform.

Please choose a person to relate this publication to

Yinyin Yuan

Lin Lin

Lin Lin

Lin Lin

Lin Lin

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Lin, Yinyin"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Impacts of external magnetic field and high temperature disturbance on MRAM reliability based on FPGA test platform.

Please choose a person to relate this publication to

Yinyin Yuan

Lin Lin

Lin Lin

Lin Lin

Lin Lin

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Impacts of external magnetic field and high temperature disturbance on MRAM reliability based on FPGA test platform.