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Disambiguation of "Pesic, Milan"

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Gate stack engineering for emerging polarization based non-volatile memories.

. Dresden University of Technology, Germany, (2017)

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Alexander Pesic

Marija Pesic

Anita Pesic

Mihael Pesic

Katrin Pesic

 

Other publications of authors with the same name

Gate stack engineering for emerging polarization based non-volatile memories.. Dresden University of Technology, Germany, (2017)Electron-assisted switching in FeFETs: Memory window dynamics - retention - trapping mechanisms and correlation., , , , , and . IRPS, page 4. IEEE, (2022)Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories., , , , , , , and . ESSDERC, page 160-163. IEEE, (2017)Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents., , , , , , , and . IMW, page 1-4. IEEE, (2022)Insights into device and material origins and physical mechanisms behind cross temperature in 3D NAND., , , , , , , , , and 3 other author(s). IRPS, page 1-8. IEEE, (2023)Variability sources and reliability of 3D - FeFETs., , , , , , , , , and 3 other author(s). IRPS, page 1-7. IEEE, (2021)Reliability of Non-Volatile Memory Devices for Neuromorphic Applications: A Modeling Perspective (Invited)., , , , , , and . IRPS, page 3. IEEE, (2022)Understanding and Variability of Lateral Charge Migration in 3D CT-NAND Flash with and Without Band-Gap Engineered Barriers., , , , , , , and . IRPS, page 1-8. IEEE, (2019)The Role of Defects and Interface Degradation on Ferroelectric HZO Capacitors Aging., , , and . IRPS, page 1-6. IEEE, (2023)Comparison of hafnia and PZT based ferroelectrics for future non-volatile FRAM applications., , , , , , , , and . ESSDERC, page 369-372. IEEE, (2016)