( en | de | ru )

 

Disambiguation

From post

копироватьудалитьдобавить публикацию в буфер
Gate stack engineering for emerging polarization based non-volatile memories.

. Dresden University of Technology, Germany, (2017)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

Alexander Pesic

Marija Pesic

Mihael Pesic

Anita Pesic

Katrin Pesic

 

Другие публикации лиц с тем же именем

Electron-assisted switching in FeFETs: Memory window dynamics - retention - trapping mechanisms and correlation., , , , , и . IRPS, стр. 4. IEEE, (2022)Gate stack engineering for emerging polarization based non-volatile memories.. Dresden University of Technology, Germany, (2017)Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories., , , , , , , и . ESSDERC, стр. 160-163. IEEE, (2017)Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents., , , , , , , и . IMW, стр. 1-4. IEEE, (2022)Understanding and Variability of Lateral Charge Migration in 3D CT-NAND Flash with and Without Band-Gap Engineered Barriers., , , , , , , и . IRPS, стр. 1-8. IEEE, (2019)The Role of Defects and Interface Degradation on Ferroelectric HZO Capacitors Aging., , , и . IRPS, стр. 1-6. IEEE, (2023)Comparison of hafnia and PZT based ferroelectrics for future non-volatile FRAM applications., , , , , , , , и . ESSDERC, стр. 369-372. IEEE, (2016)Impact of field cycling on HfO2 based non-volatile memory devices., , , , , , , , , и 10 other автор(ы). ESSDERC, стр. 364-368. IEEE, (2016)Demonstration and Endurance Improvement of p-channel Hafnia-based Ferroelectric Field Effect Transistors., , , , , и . DRC, стр. 51-52. IEEE, (2019)Anti-ferroelectric-like ZrO2 non-volatile memory: Inducing non-volatility within state-of-the-art DRAM., , , , , и . NVMTS, стр. 1-4. IEEE, (2017)