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Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron., , , , , и . ESSDERC, стр. 130-133. IEEE, (2017)Lifetime Prediction of Current-and Temperature-Induced Degradation in Silicone-Encapsulated 365 nm High-Power Light-Emitting Diodes., , , , , , и . IEEE Access, (2023)Full Optical Contactless Thermometry Based on LED Photoluminescence., , , , , , , и . IEEE Trans. Instrum. Meas., (2021)Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT., , , , , , , , , и 6 other автор(ы). IRPS, стр. 1-8. IEEE, (2021)Modeling challenges for high-efficiency visible light-emitting diodes., , , , , , , , , и 3 other автор(ы). RTSI, стр. 157-160. IEEE, (2015)Single- and double-heterostructure GaN-HEMTs devices for power switching applications., , , , , , , , , и . Microelectron. Reliab., 52 (9-10): 2426-2430 (2012)Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits., , , , , и . Microelectron. Reliab., 52 (9-10): 2093-2097 (2012)Degradation of GaN-on-GaN vertical diodes submitted to high current stress., , , , , , , , , и 1 other автор(ы). Microelectron. Reliab., (2018)Degradation of InGaN-based LEDs related to charge diffusion and build-up., , , , и . Microelectron. Reliab., (2016)High brightness GaN LEDs degradation during dc and pulsed stress., , , , , , , и . Microelectron. Reliab., 46 (9-11): 1720-1724 (2006)