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Disambiguation of "Hattori, Takeo"

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Carrier separation and Vth measurements of W-La2O3 gated MOSFET structures after electrical stress.

, , , , , , and . IEICE Electron. Express, 4 (6): 185-191 (2007)

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Tomokazu Hattori

Takeo Ohnishi

Takeo OÌ sawa

 

Other publications of authors with the same name

Angle-resolved photoelectron spectroscopy on gate insulators., , , , , and . Microelectron. Reliab., 47 (1): 20-26 (2007)Oxide and interface trap densities estimation in ultrathin W/La2O3/Si MOS capacitors., , , , , , , , , and 2 other author(s). Microelectron. Reliab., 52 (6): 1039-1042 (2012)Carrier separation and Vth measurements of W-La2O3 gated MOSFET structures after electrical stress., , , , , , and . IEICE Electron. Express, 4 (6): 185-191 (2007)(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture., , , , , , , , , and . ESSDERC, page 89-92. IEEE, (2012)Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack., , , , , , , and . Microelectron. Reliab., 48 (11-12): 1769-1771 (2008)Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing., , , , , , and . IEICE Electron. Express, 3 (13): 316-321 (2006)Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise., , , , , , , , , and 2 other author(s). Microelectron. Reliab., 51 (4): 746-750 (2011)Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La2O3 gate dielectrics., , , , , , and . Microelectron. Reliab., 50 (6): 790-793 (2010)Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer., , , , , , , , and . Microelectron. Reliab., 52 (4): 688-691 (2012)SrO capping effect for La2O3/Ce-silicate gate dielectrics., , , , , , , , , and 3 other author(s). Microelectron. Reliab., 50 (3): 356-359 (2010)