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Disambiguation of "Ahmet, Parhat"

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Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing.

, , , , , , and . IEICE Electron. Express, 3 (13): 316-321 (2006)

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Hikmet Ahmet

Hajrullah Ahmeti

Ahmet Derecik

Ahmet Çakir

Ahmet Yüce

 

Other publications of authors with the same name

Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack., , , , , , , and . Microelectron. Reliab., 48 (11-12): 1769-1771 (2008)Si nanowire FET and its modeling., , , , , , , , and . Sci. China Inf. Sci., 54 (5): 1004-1011 (2011)Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors., , , , , , and . Microelectron. Reliab., 51 (5): 879-884 (2011)Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement., , , , , , , , , and 2 other author(s). Microelectron. Reliab., 54 (4): 725-729 (2014)Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness., , , , , and . Microelectron. Reliab., 50 (3): 332-337 (2010)Oxide and interface trap densities estimation in ultrathin W/La2O3/Si MOS capacitors., , , , , , , , , and 2 other author(s). Microelectron. Reliab., 52 (6): 1039-1042 (2012)Carrier separation and Vth measurements of W-La2O3 gated MOSFET structures after electrical stress., , , , , , and . IEICE Electron. Express, 4 (6): 185-191 (2007)(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture., , , , , , , , , and . ESSDERC, page 89-92. IEEE, (2012)Parasitic Effects in Multi-Gate MOSFETs., , , , , , , and . IEICE Trans. Electron., 90-C (10): 2051-2056 (2007)Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La2O3 gate dielectrics., , , , , , and . Microelectron. Reliab., 50 (6): 790-793 (2010)