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Determination of safe reliability region over temperature and current density for through wafer vias.

, , and . Microelectron. Reliab., (2017)

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A comparison of linear handset power amplifiers in different bipolar technologies., and . IEEE J. Solid State Circuits, 39 (10): 1746-1754 (2004)Simulation comparison of InGaP/GaAs HBT thermal performance in wire-bonding and flip-chip technologies., , , , , , and . Microelectron. Reliab., (2017)Measuring seam/crack formation in interconnect metallization., , , and . Microelectron. Reliab., 52 (12): 2870-2874 (2012)An InGaP/GaAs Merged HBT-FET (BiFET) Technology and Applications to the Design of Handset Power Amplifiers., , , , , , , , , and 4 other author(s). IEEE J. Solid State Circuits, 42 (10): 2137-2148 (2007)Will CMOS amplifiers ever Kick-GaAs?. CICC, page 1-4. IEEE, (2010)Improving Performance of InGaP/GaAs HBT Arrays by means of Temperature-Dependent Base Ballasting Resistors., , , , and . PRIME, page 9-12. IEEE, (2023)From Transistor Parameters to PA Circuit Performance (Invited).. BCICTS, page 1-7. IEEE, (2021)Characterization, design, modeling, and model validation of silicon-wafer M: N balun components under matched and unmatched conditions., , , , and . IEEE J. Solid State Circuits, 41 (5): 1201-1209 (2006)Introduction to the Special Issue on the Third IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)., and . IEEE J. Solid State Circuits, 42 (10): 2075-2076 (2007)Formulations and a Computer-Aided Test Method for the Estimation of IMD Levels in an Envelope Feedback RFIC Power Amplifier., , , , and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 31 (12): 1881-1893 (2012)