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Lasing in structures with InAs quantum dots in an (Al,Ga)As matrix grown by submonolayer deposition, , , , , , , , , and 8 other author(s). J.~Electron.~Mat., (1999)Shell-like formation of self-organized InAs/GaAs quantum dots, , , , , , and . Phys.~Rev.~B, 71 (4): 045325 (2005)Optical properties of InAs quantum dots in a Si matrix, , , , , , , , , and 3 other author(s). Appl. Phys. Lett., 74 (12): 1701--1703 (1999)Fehlerabschätzungen für ein numerisches Verfahren zur Auflösung linearer Integralgleichungen mit schwachsingulären Kernen., and . Computing, 3 (1): 22-46 (1968)Radiative recombination in type-II GaSb/GaAs quantum dots, , , , , , , , , and 4 other author(s). Appl.~Phys.~Lett., (1995)Ordered Arrays of Quantum Dots: Formation, Electronic Spectra, Relaxing Phenomena, Lasing, , , , , , , , , and 7 other author(s). Sol.~State El., (1996)Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth, , , , , , , , , and 10 other author(s). Phys.~Rev.~B, (1996)Daily Mean Sea Level Pressure Reconstructions for the European–North Atlantic Region for the Period 1850–2003, , , , , , , , , and 29 other author(s). J. Climate, 19 (12): 2717--2742 (Jun 1, 2006)Enhanced electrical properties of nominally undoped Si/SiGe heterostructure nanowires grown by molecular beam epitaxy., , , , and . Microelectron. J., 40 (3): 452-455 (2009)InAs/GaAs quantum dots: Radiative recombination from zero-dimensional states, , , , , , , , , and 6 other author(s). phys.~status solidi (b), (1995)