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Transistor and circuit design for 100-200-GHz ICs.

Z. Griffith, Y. Dong, D. Scott, Y. Wei, N. Parthasarathy, M. Dahlström, C. Kadow, V. Paidi, M. Rodwell, M. Urteaga, R. Pierson, P. Rowell, B. Brar, S. Lee, N. Nguyen, and C. Nguyen. IEEE J. Solid State Circuits, 40 (10): 2061-2069 (2005)

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Miguel Beato

Miguel Cardozo

Miguel Astner

Miguel Coelho

Miguel Cruset

Other publications of authors with the same name

InP HBT IC Technology for Terahertz Frequencies: Fundamental Oscillators Up to 0.57 THz.M. Seo, M. Urteaga, J. Hacker, A. Young, Z. Griffith, V. Jain, R. Pierson, P. Rowell, A. Skalare, A. Peralta and 3 other author(s). IEEE J. Solid State Circuits, 46 (10): 2203-2214 (2011)InP HBT Technologies for sub-THz Communications.M. Urteaga, Z. Griffith, A. Arias-Purdue, A. Carter, P. Rowell, J. Hacker, and B. Brar. VLSI Technology and Circuits, page 122-123. IEEE, (2022)An 18-GHz continuous-time Σ-Δ analog-digital converter implemented in InP-transferred substrate HBT technology.S. Jaganathan, S. Krishnan, D. Mensa, T. Mathew, Y. Betser, Y. Wei, D. Scott, M. Urteaga, and M. Rodwell. IEEE J. Solid State Circuits, 36 (9): 1343-1350 (2001)50 - 250 GHz High-Gain Power Amplifier MMICs in 250-nm InP HBT.Z. Griffith, M. Urteaga, P. Rowell, L. Tran, and B. Brar. BCICTS, page 1-6. IEEE, (2019)8.6-13.6 mW Series-Connected Power Amplifiers Designed at 325 GHz Using 130 nm InP HBT Technology.A. Ahmed, A. Simsek, M. Urteaga, and M. Rodwell. BCICTS, page 164-167. IEEE, (2018)An Ultra-Low-Power Dual-Polarization Transceiver Front-End for 94-GHz Phased Arrays in 130-nm InP HBT.S. Kim, R. Maurer, A. Simsek, M. Urteaga, and M. Rodwell. IEEE J. Solid State Circuits, 52 (9): 2267-2276 (2017)A Dual-Conversion Front-End with a W-Band First Intermediate Frequency for 1-30 GHz Reconfigurable Transceivers.A. Simsek, S. Kim, A. Ahmed, R. Maurer, M. Urteaga, and M. Rodwell. RWS, page 1-4. IEEE, (2019)A 529 GHz dynamic frequency divider in 130 nm InP HBT process.M. Seo, J. Hacker, M. Urteaga, A. Skalare, and M. Rodwell. IEICE Electron. Express, 12 (3): 20141118 (2015)Transistor and circuit design for 100-200-GHz ICs.Z. Griffith, Y. Dong, D. Scott, Y. Wei, N. Parthasarathy, M. Dahlström, C. Kadow, V. Paidi, M. Rodwell, M. Urteaga and 6 other author(s). IEEE J. Solid State Circuits, 40 (10): 2061-2069 (2005)G-band (140-220-GHz) InP-based HBT amplifiers.M. Urteaga, D. Scott, S. Krishnan, Y. Wei, M. Dahlström, Z. Griffith, N. Parthasarathy, and M. Rodwell. IEEE J. Solid State Circuits, 38 (9): 1451-1456 (2003)

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Disambiguation of "Urteaga, Miguel"

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Transistor and circuit design for 100-200-GHz ICs.

Please choose a person to relate this publication to

Miguel Beato

Miguel Cardozo

Miguel Astner

Miguel Coelho

Miguel Cruset

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Urteaga, Miguel"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Transistor and circuit design for 100-200-GHz ICs.

Please choose a person to relate this publication to

Miguel Beato

Miguel Cardozo

Miguel Astner

Miguel Coelho

Miguel Cruset

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
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history of this post
URL
DOI
BibTeX
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APA
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Transistor and circuit design for 100-200-GHz ICs.