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Transistor and circuit design for 100-200-GHz ICs.

, , , , , , , , , , , , , , , и . IEEE J. Solid State Circuits, 40 (10): 2061-2069 (2005)

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Miguel Beato

Miguel Cardozo

Miguel Cruset

Miguel Astner

Miguel Coelho

 

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InP HBT IC Technology for Terahertz Frequencies: Fundamental Oscillators Up to 0.57 THz., , , , , , , , , и 3 other автор(ы). IEEE J. Solid State Circuits, 46 (10): 2203-2214 (2011)InP HBT Technologies for sub-THz Communications., , , , , , и . VLSI Technology and Circuits, стр. 122-123. IEEE, (2022)An 18-GHz continuous-time Σ-Δ analog-digital converter implemented in InP-transferred substrate HBT technology., , , , , , , , и . IEEE J. Solid State Circuits, 36 (9): 1343-1350 (2001)50 - 250 GHz High-Gain Power Amplifier MMICs in 250-nm InP HBT., , , , и . BCICTS, стр. 1-6. IEEE, (2019)8.6-13.6 mW Series-Connected Power Amplifiers Designed at 325 GHz Using 130 nm InP HBT Technology., , , и . BCICTS, стр. 164-167. IEEE, (2018)An Ultra-Low-Power Dual-Polarization Transceiver Front-End for 94-GHz Phased Arrays in 130-nm InP HBT., , , , и . IEEE J. Solid State Circuits, 52 (9): 2267-2276 (2017)A Dual-Conversion Front-End with a W-Band First Intermediate Frequency for 1-30 GHz Reconfigurable Transceivers., , , , , и . RWS, стр. 1-4. IEEE, (2019)A 529 GHz dynamic frequency divider in 130 nm InP HBT process., , , , и . IEICE Electron. Express, 12 (3): 20141118 (2015)Millimeter-Wave Series Power Combining Using Sub-Quarter-Wavelength Baluns., , , , , и . IEEE J. Solid State Circuits, 49 (10): 2089-2102 (2014)InP HBT Technologies for THz Integrated Circuits., , , , и . Proc. IEEE, 105 (6): 1051-1067 (2017)