Author of the publication

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors.

L. Grenouillet, N. Castellani, A. Persico, V. Meli, S. Martin, O. Billoint, R. Segaud, S. Bernasconi, C. Pellissier, C. Jahan, C. Charpin-Nicolle, P. Dezest, C. Carabasse, P. Besombes, S. Ricavy, N. Tran, A. Magalhaes-Lucas, A. Roman, C. Boixaderas, T. Magis, M. Bedjaoui, M. Tessaire, A. Seignard, F. Mazen, S. Landis, E. Vianello, G. Molas, F. Gaillard, J. Arcamone, and E. Nowak. IMW, page 1-4. IEEE, (2021)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Nina Nowak

Exploring the relations between bulges and central black holes in unusual galaxiesN. Nowak. Uni München, (2009)

Ursula E E Köhler

Uwe Nowak

Alexander Nowak

Vinzenz Nowak

Other publications of authors with the same name

Specificities of linear Si QD arrays integration and characterization.H. Niebojewski, B. Bertrand, E. Nowak, T. Bedecarrats, B. Paz, L. Contamin, P. Mortemousque, V. Labracherie, L. Brevard, H. Sahin and 11 other author(s). VLSI Technology and Circuits, page 415-416. IEEE, (2022)Ge-Se-Sb-N-based OTS scaling perspectives for high-density 1 S1R crossbar arrays.J. Lopez, N. Castellani, L. Grenouillet, L. Reganaz, G. Navarro, M. Bernard, C. Carabasse, T. Magis, D. Deleruyelle, M. Bocquet and 3 other author(s). IMW, page 1-4. IEEE, (2021)RTN and LFN Noise Performance in Advanced FDSOI Technology.L. Pirro, O. Zimmerhackl, A. Zaka, L. Müller-Meskamp, R. Nelluri, T. Hermann, I. Cortes-Mayol, A. Huschka, M. Otto, E. Nowak and 2 other author(s). ESSDERC, page 254-257. IEEE, (2018)Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited).W. Vandendaele, C. Leurquin, R. Lavieville, M. Jaud, A. Viey, R. Gwoziecki, B. Mohamad, E. Nowak, A. Constant, and F. Iucolano. IRPS, page 1-8. IEEE, (2023)16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors.L. Grenouillet, N. Castellani, A. Persico, V. Meli, S. Martin, O. Billoint, R. Segaud, S. Bernasconi, C. Pellissier, C. Jahan and 20 other author(s). IMW, page 1-4. IEEE, (2021)Multi-Game Modeling for Counter-Smuggling.C. Bakker, J. Webster, K. Nowak, S. Chatterjee, C. Perkins, and R. Brigantic. Reliab. Eng. Syst. Saf., (2020)Noise properties of ferromagnetic tunnel junctionsE. Nowak, R. Merithew, M. Weissman, I. Bloom, and S. Parkin. Journal of Applied Physics, 84 (11): 6195-6201 (1998)Relative Hausdorff distance for network analysis.S. Aksoy, K. Nowak, E. Purvine, and S. Young. Appl. Netw. Sci., 4 (1): 80:1-80:25 (2019)High-performance CMOS variability in the 65-nm regime and beyondK. Bernstein, D. Frank, A. Gattiker, W. Haensch, B. Ji, S. Nassif, E. Nowak, D. Pearson, and N. Rohrer. IBM Journal of Research and Development, 50 (4/5): 433--449 (July 2006)Low-frequency magnetic and resistance noise in magnetic tunnel junctionsL. Jiang, E. Nowak, P. Scott, J. Johnson, J. Slaughter, J. Sun, and R. Dave. Phys. Rev. B, 69 (5): 054407 (February 2004)

BibSonomy

Disambiguation of "Nowak, E."

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors.

Please choose a person to relate this publication to

Nina Nowak

Ursula E E Köhler

Uwe Nowak

Alexander Nowak

Vinzenz Nowak

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Nowak, E."

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML 16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors.

Please choose a person to relate this publication to

Nina Nowak

Ursula E E Köhler

Uwe Nowak

Alexander Nowak

Vinzenz Nowak

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors.