Author of the publication

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Modeling Inter-Aspect Relations With Clause and Contrastive Learning for Aspect-Based Sentiment Analysis.

Z. Qiu, K. Chen, Y. Xue, Z. Ma, and Z. Zhang. IEEE Trans. Comput. Soc. Syst., 11 (2): 2833-2842 (April 2024)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Zhang Zhang

Meng Zhang

Methods and implementations of road-network matchingM. Zhang. TU München, (2009)

Yan Zhang

Xianghong Zhang

Miao Zhang

Other publications of authors with the same name

Bias dependence of TID radiation responses of 0.13 μm partially depleted SOI NMOSFETs.B. Ning, D. Bi, H. Huang, Z. Zhang, Z. Hu, M. Chen, and S. Zou. Microelectron. Reliab., 53 (2): 259-264 (2013)Investigation of the total dose response of partially depleted SOI nMOSFETs using TCAD simulation and experiment.H. Huang, D. Bi, and Z. Zhang. Microelectron. J., 45 (6): 759-766 (2014)Improved Modular Convolution Neural Network for Human Pose Estimation.Z. Zhang, J. Dong, D. Zhou, X. Fang, and X. Wei. Edutainment, volume 11462 of Lecture Notes in Computer Science, page 378-388. Springer, (2018)A novel self-recoverable and triple nodes upset resilience DICE latch.D. Lin, Y. Xu, X. Li, X. Xie, J. Jiang, J. Ren, H. Zhu, Z. Zhang, and S. Zou. IEICE Electron. Express, 15 (19): 20180753 (2018)Total ionizing dose effect in 0.2 μm PDSOI NMOSFETs with shallow trench isolation.C. Peng, Z. Hu, Z. Zhang, H. Huang, B. Ning, and D. Bi. Microelectron. Reliab., 54 (4): 730-737 (2014)Comprehensive study on the TID effects of 0.13 μm partially depleted SOI NMOSFETs.B. Ning, D. Bi, H. Huang, Z. Zhang, M. Chen, and S. Zou. Microelectron. J., 44 (2): 86-93 (2013)Hardening silicon-on-insulator nMOSFETs by multiple-step Si+ implantation.H. Huang, Y. Huang, J. Zheng, S. Wei, K. Tang, D. Bi, and Z. Zhang. Microelectron. Reliab., (2016)Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology.B. Ning, Z. Zhang, Z. Liu, Z. Hu, M. Chen, D. Bi, and S. Zou. Microelectron. Reliab., 52 (1): 130-136 (2012)Radiation induced transconductance overshoot in the 130 nm partially-depleted SOI MOSFETs.C. Peng, Y. En, Z. Zhang, Y. Liu, and Z. Lei. Microelectron. Reliab., (2017)Bias dependence of TID induced single transistor latch for 0.13 μm partially depleted SOI input/output NMOSFETs.S. Fan, B. Ning, Z. Hu, Z. Zhang, D. Bi, C. Peng, L. Song, and L. Dai. Microelectron. Reliab., (2016)

BibSonomy

Disambiguation of "Zhang, Zhengxuan"

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Modeling Inter-Aspect Relations With Clause and Contrastive Learning for Aspect-Based Sentiment Analysis.

Please choose a person to relate this publication to

Zhang Zhang

Meng Zhang

Yan Zhang

Xianghong Zhang

Miao Zhang

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Zhang, Zhengxuan"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Modeling Inter-Aspect Relations With Clause and Contrastive Learning for Aspect-Based Sentiment Analysis.

Please choose a person to relate this publication to

Zhang Zhang

Meng Zhang

Yan Zhang

Xianghong Zhang

Miao Zhang

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Modeling Inter-Aspect Relations With Clause and Contrastive Learning for Aspect-Based Sentiment Analysis.