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NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures., , , , , , , , , и . IRPS, стр. 2. IEEE, (2015)ESD protection diodes in optical interposer technology., , , , , , и . ICICDT, стр. 1-4. IEEE, (2015)Physics-based device aging modelling framework for accurate circuit reliability assessment., , , , , , , , , и . IRPS, стр. 1-6. IEEE, (2021)Understanding the memory window in 1T-FeFET memories: a depolarization field perspective., , , , , , , и . IMW, стр. 1-4. IEEE, (2021)Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps., , , , , , и . IRPS, стр. 5. IEEE, (2018)The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation., , , , , и . IRPS, стр. 1-7. IEEE, (2020)Degradation analysis of datapath logic subblocks under NBTI aging in FinFET technology., , , , , , , , , и . ISQED, стр. 473-479. IEEE, (2014)Experimental calibration of the temperature dependence of the heterojunction bandgap in III-V tunneling devices., , , , и . DRC, стр. 253-254. IEEE, (2019)A new degradation model and lifetime extrapolation technique for lightly doped drain nMOSFETs under hot-carrier degradation., , , , , , и . Microelectron. Reliab., 41 (3): 437-443 (2001)Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper., , , , , , , , и . IRPS, стр. 1-10. IEEE, (2023)