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5.6 A 1/2.65in 44Mpixel CMOS Image Sensor with 0.7µm Pixels Fabricated in Advanced Full-Depth Deep-Trench Isolation Technology.

H. Kim, J. Park, I. Joe, D. Kwon, J. Kim, D. Cho, T. Lee, C. Lee, H. Park, S. Hong, C. Chang, J. Kim, H. Lim, Y. Oh, Y. Kim, S. Nah, S. Jung, J. Lee, J. Ahn, H. Hong, K. Lee, and H. Kang. ISSCC, page 104-106. IEEE, (2020)

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Jongeun Kim

Sungjune Park

Rosemary Park

Kwan Park

Jinhyung Park

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5.6 A 1/2.65in 44Mpixel CMOS Image Sensor with 0.7µm Pixels Fabricated in Advanced Full-Depth Deep-Trench Isolation Technology.H. Kim, J. Park, I. Joe, D. Kwon, J. Kim, D. Cho, T. Lee, C. Lee, H. Park, S. Hong and 12 other author(s). ISSCC, page 104-106. IEEE, (2020)Kernel Estimation Using Total Variation Guided GAN for Image Super-Resolution.J. Park, H. Kim, and M. Kang. Sensors, 23 (7): 3734 (April 2023)13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate.D. Kim, H. Kim, S. Yun, Y. Song, J. Kim, S. Joe, K. Kang, J. Jang, H. Yoon, K. Lee and 35 other author(s). ISSCC, page 218-220. IEEE, (2020)A 64Mpixel CMOS Image Sensor with 0.50µm Unit Pixels Separated by Front Deep-Trench Isolation.S. Park, C. Lee, S. Park, H. Park, T. Lee, D. Park, M. Heo, I. Park, H. Yeo, Y. Lee and 22 other author(s). ISSCC, page 1-3. IEEE, (2022)7.1 A 1/4-inch 8Mpixel CMOS image sensor with 3D backside-illuminated 1.12μm pixel with front-side deep-trench isolation and vertical transfer gate.J. Ahn, K. Lee, Y. Kim, H. Jeong, B. Kim, H. Kim, J. Park, T. Jung, W. Park, T. Lee and 29 other author(s). ISSCC, page 124-125. IEEE, (2014)Color Decision System Based on Deep Learning and Fuzzy Inference System.E. Kim, J. Park, J. Kim, and S. Kim. SCIS&ISIS, page 236-239. IEEE, (2018)Image brightness adjustment system based on ANFIS by RGB and CIE L∗a∗b∗.E. Kim, H. Cho, H. Lee, J. Park, and S. Kim. MFI, page 471-476. IEEE, (2017)A 1/2.33-inch 14.6M 1.4μm-pixel backside-illuminated CMOS image sensor with floating diffusion boosting.S. Lee, K. Lee, J. Park, H. Han, Y. Park, T. Jung, Y. Jang, B. Kim, Y. Kim, S. Hamami and 7 other author(s). ISSCC, page 416-418. IEEE, (2011)Development of an Integrated Informatics Curriculum for K-12 in Korea.S. Yoo, Y. Yeum, Y. Kim, S. Cha, J. Kim, H. Jang, S. Choi, H. Lee, D. Kwon, H. Han and 4 other author(s). ISSEP, volume 4226 of Lecture Notes in Computer Science, page 199-208. Springer, (2006)7.9 1/2.74-inch 32Mpixel-Prototype CMOS Image Sensor with 0.64μ m Unit Pixels Separated by Full-Depth Deep-Trench Isolation.J. Park, S. Park, K. Cho, T. Lee, C. Lee, D. Kim, B. Lee, S. Kim, H. Ji, D. Im and 22 other author(s). ISSCC, page 122-124. IEEE, (2021)

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Disambiguation of "Park, Jongeun"

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5.6 A 1/2.65in 44Mpixel CMOS Image Sensor with 0.7µm Pixels Fabricated in Advanced Full-Depth Deep-Trench Isolation Technology.

Please choose a person to relate this publication to

Jongeun Kim

Sungjune Park

Rosemary Park

Kwan Park

Jinhyung Park

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Park, Jongeun"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML 5.6 A 1/2.65in 44Mpixel CMOS Image Sensor with 0.7µm Pixels Fabricated in Advanced Full-Depth Deep-Trench Isolation Technology.

Please choose a person to relate this publication to

Jongeun Kim

Sungjune Park

Rosemary Park

Kwan Park

Jinhyung Park

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
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URL
DOI
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5.6 A 1/2.65in 44Mpixel CMOS Image Sensor with 0.7µm Pixels Fabricated in Advanced Full-Depth Deep-Trench Isolation Technology.