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Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror.

, , , , and . Microelectron. Reliab., 47 (4-5): 665-668 (2007)

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Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs., , , , , , and . Microelectron. Reliab., 52 (9-10): 1924-1927 (2012)Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror., , , , and . Microelectron. Reliab., 47 (4-5): 665-668 (2007)Power-Efficient Noise-Induced Reduction of ReRAM Cell's Temporal Variability Effects., , , , , , , , and . IEEE Trans. Circuits Syst. II Express Briefs, 68 (4): 1378-1382 (2021)Influence of the interface trap location on the performance and variability of ultra-scaled MOSFETs., , , , , and . Microelectron. Reliab., 53 (9-11): 1243-1246 (2013)A shapeshifting evolvable hardware mechanism based on reconfigurable memFETs crossbar architecture., , , , , and . Microelectron. Reliab., 54 (8): 1500-1510 (2014)Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications., , , , and . Microelectron. Reliab., 53 (9-11): 1247-1251 (2013)Challenges and solutions to the defect-centric modeling and circuit simulation of time-dependent variability., , , , , , , and . IRPS, page 1-9. IEEE, (2023)Beneficial Role of Noise in Hf-based Memristors., , , , , , , , and . ISCAS, page 975-979. IEEE, (2022)Strategies for parameter extraction of the time constant distribution of time-dependent variability models for nanometer-scale devices., , , , , , and . SMACD, page 1-4. IEEE, (2023)TARS: A toolbox for statistical reliability modeling of CMOS devices., , , , , , and . SMACD, page 1-4. IEEE, (2017)