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AlGaN/GaN HEMTs-an overview of device operation and applications.

, , и . Proc. IEEE, 90 (6): 1022-1031 (2002)

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K Mishra

Harsha Umesh Babu

Umesh Gangishetti

Umesh Patil

Umesh Kumar

 

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1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions., , , , , , , , , и . Microelectron. Reliab., 51 (2): 212-216 (2011)Gallium Nitride Versus Silicon Carbide: Beyond the Switching Power Supply.. Proc. IEEE, 111 (4): 322-328 (апреля 2023)Broadband GaAs MESFET and GaN HEMT resistive feedback power amplifiers., , , , , и . IEEE J. Solid State Circuits, 35 (9): 1285-1292 (2000)Ultra-high speed modulation-doped field-effect transistors: a tutorial review., , и . Proc. IEEE, 80 (4): 494-518 (1992)Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs., , , , , , , , , и 4 other автор(ы). IRPS, стр. 1-2. IEEE, (2021)Commercialization and reliability of 600 V GaN power switches., , , , , , , , , и 7 other автор(ы). IRPS, стр. 6. IEEE, (2015)AlGaN/GaN HEMTs-an overview of device operation and applications., , и . Proc. IEEE, 90 (6): 1022-1031 (2002)A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT., , , , , , , , , и 1 other автор(ы). DRC, стр. 1-2. IEEE, (2020)Reduction of Saturation Voltage in InGaAs-Channel/lnGaN-Drain Vertical FETs and the role of traps at the InGaAs/lnGaN junction., , , , , , и . DRC, стр. 149-150. IEEE, (2019)GaN-Based RF Power Devices and Amplifiers., , , и . Proc. IEEE, 96 (2): 287-305 (2008)