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Wideband Mixed-Domain Multi-Tap Finite-Impulse Response Filtering of Out-of-Band Noise Floor in Watt-Class Digital Transmitters., , and . IEEE J. Solid State Circuits, 52 (12): 3405-3420 (2017)A Fully Integrated 160Gb/s D-Band Transmitter with 1.1 pJ/b Efficiency in 22nm FinFET Technology., , , , , , , , , and 2 other author(s). ISSCC, page 78-80. IEEE, (2022)13.10 A >1W 2.2GHz switched-capacitor digital power amplifier with wideband mixed-domain multi-tap FIR filtering of OOB noise floor., , and . ISSCC, page 234-235. IEEE, (2017)Design Tradeoffs and Predistortion of Digital Cartesian RF-Power-DAC Transmitters., and . IEEE Trans. Circuits Syst. II Express Briefs, 63-II (11): 1039-1043 (2016)A 128-Gb/s D-Band Receiver With Integrated PLL and ADC Achieving 1.95-pJ/b Efficiency in 22-nm FinFET., , , , , , , , , and 2 other author(s). IEEE J. Solid State Circuits, 58 (12): 3364-3379 (December 2023)A 128Gb/s 1.95pJ/b D-Band Receiver with Integrated PLL and ADC in 22nm FinFET., , , , , , , , , and 2 other author(s). ISSCC, page 284-285. IEEE, (2023)A Fully Integrated 160-Gb/s D-Band Transmitter Achieving 1.1-pJ/b Efficiency in 22-nm FinFET., , , , , , , , , and 1 other author(s). IEEE J. Solid State Circuits, 57 (12): 3582-3598 (2022)