( en | de | ru )

 

Disambiguation of "Andersen, Toke Meyer"

Author of the publication

copydeleteadd this publication to your clipboard
22.1 A 90GS/s 8b 667mW 64× interleaved SAR ADC in 32nm digital SOI CMOS.

, , , , , , , , , and . ISSCC, page 378-379. IEEE, (2014)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Henricus Toke

-Toke Franke

Zwetanka Tokewa

Nezir Yasar Toker

Christina Toker

 

Other publications of authors with the same name

A 3.1mW 8b 1.2GS/s single-channel asynchronous SAR ADC with alternate comparators for enhanced speed in 32nm digital SOI CMOS., , , , , , , , , and . ISSCC, page 468-469. IEEE, (2013)10.6 continuous-time linear equalization with programmable active-peaking transistor arrays in a 14nm FinFET 2mW/Gb/s 16Gb/s 2-Tap speculative DFE receiver., , , , , , , , , and 1 other author(s). ISSCC, page 1-3. IEEE, (2015)A 110 mW 6 bit 36 GS/s interleaved SAR ADC for 100 GBE occupying 0.048 mm2 in 32 nm SOI CMOS., , , , , , , , , and 1 other author(s). A-SSCC, page 89-92. IEEE, (2014)20.3 A feedforward controlled on-chip switched-capacitor voltage regulator delivering 10W in 32nm SOI CMOS., , , , , , , , , and . ISSCC, page 1-3. IEEE, (2015)A 5.7mW/Gb/s 24-to-240Ω 1.6Gb/s thin-oxide DDR transmitter with 1.9-to-7.6V/ns clock-feathering slew-rate control in 22nm CMOS., , , , , , , , and . ISSCC, page 310-311. IEEE, (2013)22.1 A 90GS/s 8b 667mW 64× interleaved SAR ADC in 32nm digital SOI CMOS., , , , , , , , , and . ISSCC, page 378-379. IEEE, (2014)Implementation of Low-Power 6-8 b 30-90 GS/s Time-Interleaved ADCs With Optimized Input Bandwidth in 32 nm CMOS., , , , , , , , , and 1 other author(s). IEEE J. Solid State Circuits, 51 (3): 636-648 (2016)4.7 A sub-ns response on-chip switched-capacitor DC-DC voltage regulator delivering 3.7W/mm2 at 90% efficiency using deep-trench capacitors in 32nm SOI CMOS., , , , , , , , , and 1 other author(s). ISSCC, page 90-91. IEEE, (2014)A DDR3/4 memory link TX supporting 24-40 Ω, 0.8-1.6 V, 0.8-5.0 Gb/s with slew rate control and thin oxide output stages in 22-nm CMOS SOI., , , , , , , , and . ESSCIRC, page 135-138. IEEE, (2014)