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Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs.

, , , , , and . Microelectron. Reliab., 42 (4-5): 669-677 (2002)

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Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress., , , , , , , , , and 4 other author(s). J. Circuits Syst. Comput., 31 (18): 2240003:1-2240003:25 (December 2022)NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions., , , , , , , and . Microelectron. Reliab., 51 (9-11): 1540-1543 (2011)Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs., , , , , , and . Microelectron. Reliab., 42 (9-11): 1465-1468 (2002)NBTI and irradiation related degradation mechanisms in power VDMOS transistors., , , , , , , , and . Microelectron. Reliab., (2018)Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress., , , , , , , and . Microelectron. Reliab., 50 (9-11): 1278-1282 (2010)Effects of electrical stressing in power VDMOSFETs., , , , , , and . Microelectron. Reliab., 45 (1): 115-122 (2005)Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs., , , , , and . Microelectron. Reliab., 42 (4-5): 669-677 (2002)NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs., , , , , and . Microelectron. Reliab., 46 (9-11): 1828-1833 (2006)Effects of burn-in stressing on post-irradiation annealing response of power VDMOSFETs., , , , and . Microelectron. Reliab., 43 (9-11): 1455-1460 (2003)A review of pulsed NBTI in P-channel power VDMOSFETs., , , , , , , , , and . Microelectron. Reliab., (2018)