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Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications.

, , , , , and . IRPS, page 1-5. IEEE, (2023)

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Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors., , , and . Microelectron. Reliab., 44 (9-11): 1361-1368 (2004)Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses., , , , , , , and . Microelectron. Reliab., 41 (9-10): 1573-1578 (2001)Correlation between forward-reverse low-frequency noise and atypical I-V signatures in 980 nm high-power laser diodes., , , , , , and . Microelectron. Reliab., 55 (9-10): 1741-1745 (2015)Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates., , , , , , and . Microelectron. Reliab., 43 (9-11): 1713-1718 (2003)Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs., , , , , and . Microelectron. Reliab., 55 (9-10): 1672-1676 (2015)Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements., , , , and . ESSDERC, page 270-273. IEEE, (2012)Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications., , , , , and . IRPS, page 1-5. IEEE, (2023)Failure analysis of GaAs microwave devices with plastic encapsulation by electro-optical techniques., , , , , , , and . Microelectron. Reliab., 53 (9-11): 1375-1380 (2013)TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices., , , , and . Microelectron. Reliab., (2017)Experimental power cycling on insulated TRIAC package: Reliability interpretation thanks to an innovative failure analysis flow., , , , and . Microelectron. Reliab., 51 (9-11): 1845-1849 (2011)