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Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications.

, , , , , and . IRPS, page 1-5. IEEE, (2023)

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Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors., , , and . Microelectron. Reliab., 44 (9-11): 1361-1368 (2004)Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses., , , , , , , and . Microelectron. Reliab., 41 (9-10): 1573-1578 (2001)Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs., , , , , , , , , and 3 other author(s). Microelectron. Reliab., 49 (9-11): 1216-1221 (2009)Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test., , , , , , , , , and 1 other author(s). Microelectron. Reliab., 52 (9-10): 2184-2187 (2012)Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC., , , , , , , and . Microelectron. Reliab., 47 (9-11): 1630-1633 (2007)Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques., , , , , , , and . Microelectron. Reliab., 48 (8-9): 1366-1369 (2008)Degradation mechanisms induced by thermal and bias stresses in InP HEMTs., , , , , and . Microelectron. Reliab., 42 (9-11): 1575-1580 (2002)Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements., , , , , , , , , and 4 other author(s). Microelectron. Reliab., 53 (9-11): 1491-1495 (2013)Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors., , , , and . IRPS, page 4. IEEE, (2018)Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress., , , , , , , , , and 2 other author(s). Microelectron. Reliab., 53 (9-11): 1450-1455 (2013)