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Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature., , , , , , , и . IEEE Access, (2020)An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs., , , , , , и . IEEE Access, (2022)Threshold voltage shift and interface/border trapping mechanism in Al2O3/AlGaN/GaN MOS-HEMTs., , , , , , , , и . IRPS, стр. 1. IEEE, (2018)Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light., , , , , , , , и . Sci. China Inf. Sci., (февраля 2023)Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method., , , , , , , , , и . Sci. China Inf. Sci., (2022)Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress., , , , , , и . Microelectron. Reliab., 54 (6-7): 1293-1298 (2014)Separating the EoR Signal with a Convolutional Denoising Autoencoder: A Deep-learning-based Method., , , , , , , , , и . CoRR, (2019)Minimum Bayes Risk decoding and system combination based on a recursion for edit distance., , , и . Comput. Speech Lang., 25 (4): 802-828 (2011)Radio Galaxy Morphology Generation using Residual Convolutional Autoencoder and Gaussian Mixture Models., , , и . ICIP, стр. 3044-3048. IEEE, (2018)Minimum tag error for discriminative training of conditional random fields., , , и . Inf. Sci., 179 (1-2): 169-179 (2009)