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Frequency dependant gate oxide TDDB model., , , , , , and . IRPS, page 25-1. IEEE, (2022)Characterization and modeling of DCR and DCR drift variability in SPADs., , , , and . IRPS, page 1-5. IEEE, (2023)Guidelines for intermediate back end of line (BEOL) for 3D sequential integration., , , , , , , , , and 18 other author(s). ESSDERC, page 252-255. IEEE, (2017)Extended TDDB power-law validation for high-voltage applications such as OTP memories in High-k CMOS 28nm FDSOI technology., , , , and . IRPS, page 3. IEEE, (2015)Integrated Test Structures for Reliability Investigation under Dynamic Stimuli., , , , , and . IOLTS, page 1-5. IEEE, (2018)28nm UTBB FDSOI product reliability/performance trade-off optimization through body bias operation., , , , and . IRPS, page 6. IEEE, (2015)Integrated Test Circuit for Off-State Dynamic Drain Stress Evaluation., , , , , , and . IRPS, page 1-6. IEEE, (2023)Potentiality of healing techniques in hot-carrier damaged 28 nm FDSOI CMOS nodes., , , , , and . Microelectron. Reliab., (2016)Characterization of Low Drop-Out during ageing and design for yield., , , , , , and . Microelectron. Reliab., (2017)Modeling self-heating effects in advanced CMOS nodes., , , , , and . IRPS, page 3-1. IEEE, (2018)