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Disambiguation of "Aichinger, Thomas"

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Impact of hydrogen on recoverable and permanent damage following negative bias temperature stress

, , , , and . IEEE International Reliability Physics Symposium, page 1063. (2010)

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Corinna Aichinger

Karl Aichinger

Ulrike Aichinger

Heinrich Aichinger

Stefan Aichinger

 

Other publications of authors with the same name

Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs., , , , and . IRPS, page 3. IEEE, (2018)On the temperature dependence of NBTI recovery., , and . Microelectron. Reliab., 48 (8-9): 1178-1184 (2008)Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs., , and . Microelectron. Reliab., (2018)Impact of hydrogen on recoverable and permanent damage following negative bias temperature stress, , , , and . IEEE International Reliability Physics Symposium, page 1063. (2010)Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs., , , and . Microelectron. Reliab., 51 (9-11): 1530-1534 (2011)Gate-oxide reliability and failure-rate reduction of industrial SiC MOSFETs., and . IRPS, page 1-6. IEEE, (2020)Influence of high-voltage gate-oxide pulses on the BTI behavior of SiC MOSFETs., , , and . IRPS, page 1-6. IEEE, (2020)A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation., , , , , and . IRPS, page 1-7. IEEE, (2021)Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs., , , , , and . IRPS, page 3. IEEE, (2022)Refined NBTI characterization of arbitrarily stressed PMOS devices at ultra-low and unique temperatures., , and . Microelectron. Reliab., 53 (7): 937-946 (2013)