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Data Link Layer Processor for 100 Gbps Terahertz Wireless Communications in 28 nm CMOS Technology., , , , , , и . IEEE Access, (2019)A 30 GHz Power Detector based Reflectometer in 130nm SiGe BiCMOS for Dielectric Spectroscopy., , , , , и . ISCAS, стр. 1-4. IEEE, (2018)A V-band Bidirectional Amplifier-Module for Hybrid Phased-Array Systems in BiCMOS Technology., , , и . RWS, стр. 330-333. IEEE, (2020)Modular Data Link Layer Processing for THz communication., , , , и . DDECS, стр. 1-5. IEEE, (2019)A Broadband 110-170 GHz Frequency Multiplier by 4 Chain with 8 dBm Output Power in 130 nm BiCMOS., , , и . ESSCIRC, стр. 451-454. IEEE, (2021)Implementation of a Multi-Core Data Link Layer Processor for THz Communication., , , , , и . VTC Spring, стр. 1-5. IEEE, (2018)A low-power 190-255 GHz frequency quadrupler in SiGe BiCMOS technology for on-chip spectroscopic applications., , , , , и . RWS, стр. 94-97. IEEE, (2017)Ultra Broadband Low-Power 70 GHz Active Balun in 130-nm SiGe BiCMOS., , , , , и . BCICTS, стр. 1-4. IEEE, (2020)A Ka-Band VCO Chip with Integrated Dividers Using 1.5 V Supply in 130-nm SiGe BiCMOS Technology for Low-Power Radar Sensors., , и . BCICTS, стр. 102-105. IEEE, (2023)Vector Modulator Phase Shifters in 130-nm SiGe BiCMOS Technology for 5G Applications., , , и . RWS, стр. 64-66. IEEE, (2021)