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Disambiguation of "Ghibaudo, Gérard"

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Influence of nitradation in ultra-thin oxide on the gate current degradation of N and PMOS devices.

, , , , , , and . Microelectron. Reliab., 43 (9-11): 1433-1438 (2003)

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Gérard Gäfgen

Walter Gérard

Gérard Sprüssel

Emilie Gérard

Bruno Gérard

 

Other publications of authors with the same name

Compact modeling for the transcapacitances of undoped or lightly doped nanoscale cylindrical surrounding gate MOSFETs., , , , , and . ICECS, page 953-956. IEEE, (2012)Multiple-pulse dynamic stability and failure analysis of low-voltage 6T-SRAM bitcells in 28nm UTBB-FDSOI., , , , , , , and . ISCAS, page 1452-1455. IEEE, (2013)Guest Editorial., and . Microelectron. Reliab., 43 (8): 1173 (2003)Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions., , , , , and . Microelectron. Reliab., 41 (9-10): 1295-1300 (2001)Accurate determination of flat band voltage in advanced MOS structure., , and . Microelectron. Reliab., 47 (4-5): 660-664 (2007)Origin of hot carrier degradation in advanced nMOSFET devices., , , and . Microelectron. Reliab., 42 (9-11): 1405-1408 (2002)Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT., , , , , , , , , and 6 other author(s). IRPS, page 1-8. IEEE, (2021)Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs., , , , , and . ESSDERC, page 142-145. IEEE, (2016)Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices., , , , , , , , , and 2 other author(s). ESSDERC, page 246-249. IEEE, (2015)Optimization of Trigate-On-Insulator MOSFET aspect ratio with MASTAR., , , , and . ESSDERC, page 242-245. IEEE, (2015)