( en | de | ru )

 

Disambiguation

From post

копироватьудалитьдобавить публикацию в буфер
Influence of nitradation in ultra-thin oxide on the gate current degradation of N and PMOS devices.

, , , , , , и . Microelectron. Reliab., 43 (9-11): 1433-1438 (2003)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

Walter Gérard

Gérard Gäfgen

Gérard Sprüssel

Bruno Gérard

Emilie Gérard

 

Другие публикации лиц с тем же именем

Compact modeling for the transcapacitances of undoped or lightly doped nanoscale cylindrical surrounding gate MOSFETs., , , , , и . ICECS, стр. 953-956. IEEE, (2012)Accurate determination of flat band voltage in advanced MOS structure., , и . Microelectron. Reliab., 47 (4-5): 660-664 (2007)Guest Editorial., и . Microelectron. Reliab., 43 (8): 1173 (2003)Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions., , , , , и . Microelectron. Reliab., 41 (9-10): 1295-1300 (2001)Multiple-pulse dynamic stability and failure analysis of low-voltage 6T-SRAM bitcells in 28nm UTBB-FDSOI., , , , , , , и . ISCAS, стр. 1452-1455. IEEE, (2013)Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT., , , , , , , , , и 6 other автор(ы). IRPS, стр. 1-8. IEEE, (2021)Origin of hot carrier degradation in advanced nMOSFET devices., , , и . Microelectron. Reliab., 42 (9-11): 1405-1408 (2002)Static and Low Frequency Noise Characterization of InGaAs MOSFETs and FinFETs on Insulator., , , , , , , и . ESSDERC, стр. 166-169. IEEE, (2018)Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs., , , , , и . ESSDERC, стр. 142-145. IEEE, (2016)Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices., , , , , , , , , и 2 other автор(ы). ESSDERC, стр. 246-249. IEEE, (2015)